CS13N50A8H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID.
VDSS
500 V
CS13N50 A8H, the silicon N-channel Enhanced
ID
13 A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
150
W
RDS(ON)Typ
0.34 Ω
which reduce the conduction loss, improve switching
performance and enhance .
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